Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device

ABSTRACT

A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

TECHNICAL FIELD TO WHICH THE INVENTION BELONGS

The present invention relates to a film-forming apparatus used forforming a film of a material (hereinafter, referred to as a“vapor-deposition material”) that can be formed into a film by vapordeposition, a method of cleaning the same, and a method of manufacturingan electro-optical device using the cleaning method. In particular, thepresent invention is a technique effective in the case of using anorganic material as a vapor-deposition material.

In the present specification, an electro-optical device intends toinclude a solar battery, a CCD (charge coupled device), a CMOS sensor, aliquid crystal display apparatus, an EL display apparatus, or a lightsource including an EL element (these will be collectively referred toas a “light-emitting device”).

PRIOR ART

In recent years, a light-emitting element (hereinafter, referred to asan “EL element”) using an electro luminescent material (hereinafter,referred to as an “EL material”) that can obtain EL (electroluminescence) is being rapidly developed. In particular, an organic typeEL material (hereinafter, referred to as an “organic EL material”)allows an EL element with a low driving voltage to be manufactured, sothat such a material is expected to be applied to the next generationdisplay.

Note that, in the present specification, an EL element refers to alight-emitting element having a structure in which a layer (hereinafter,referred to as an “EL layer”) containing an EL material and an organicmaterial or an inorganic material for injecting carriers into the ELmaterial is interposed between two electrodes (positive electrode andnegative electrode), i.e., a diode composed of a positive electrode, anegative electrode, and an EL layer.

An EL element using an organic EL material generally utilises an ELlayer composed of a combination of an organic EL material and an organicmaterial. The organic EL material and the organic material are roughlyclassified into a low-molecular type (monomer type) material and ahigh-molecular type (polymer type) material. Among them, a low-moleculartype material is mainly formed into a film by vapor deposition.

The organic EL material is very likely to degrade, and is easilyoxidized in the presence of oxygen or water to degrade. Therefore, theorganic EL material cannot be subjected to photolithography after beingformed into a film. In order to pattern the film, it is required toisolate it simultaneously with the formation thereof, using a mask(hereinafter, referred to as a “vapor-deposition mask”) having anopening. Accordingly, most of the sublimated organic EL material adheresto a vapor-deposition mask or an adhesion preventing shield (protectiveplate for preventing a vapor-deposition material from adhering to aninner wall of a film-forming chamber) in a film-forming chamber.

In order to remove an organic EL material adhering to thevapor-deposition mask or the adhesion preventing shield, it is requiredto once expose the film-forming chamber to the atmosphere, take thevapor-deposition mask and the adhesion preventing shield out of thechamber, clean them, and return them into the film-forming chamber.However, there is a concern that water or oxygen adsorbed to thevapor-deposition mask and the adhesion preventing shield exposed to theatmosphere may be desorbed during the formation of a film of the organicEL material and taken into the film, which can be a factor for promotingdegradation of the organic EL material.

In this case, by conducting vacuum heating under the condition that thevapor-deposition mask and the adhesion preventing shield are set, it ispossible to remove adsorbed water or oxygen to some degree. However,vacuum heating for a long period of time causes a decrease inthroughput.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a cleaning method ofremoving a vapor-deposition material adhering to equipments or an innerwall of a film-forming chamber to which the vapor-deposition materialmay adhere without exposure to the atmosphere, a film-forming apparatusequipped with a mechanism for conducting the cleaning method, and amethod of manufacturing an electro-optical device including the cleaningmethod. In the present specification, equipments (components of afilm-forming apparatus) provided in the film-forming apparatus include asubstrate holder, a mask holder, an adhesion preventing shield, or avapor-deposition mask.

The present invention is characterized in that a vapor-depositionmaterial adhering to equipments provided in a film-forming apparatus oran inner wand the film-forming apparatus is sublimated again by heating,and the re-sublimated vapor-deposition material is exhausted through avacuum pump. As heating means, a method of heating with radiation heat,a method of heating with infrared light, or a method of heating withUV-light can be used. The method of heating with radiation heat may alsobe specifically referred to as a method of heating with an electricheating wire (metal line with a high electric resistance).

Note that it is also preferable that when the vapor-deposition materialadhering to the equipments or the like is sublimated again, gas highlyreactive to the vapor-deposition material is flowed in the film-formingchamber, whereby the re-sublimated vapor-deposition material isprevented from adhering to the equipments or the like again. Morespecifically, gas containing a halogen-group element (fluorine,chlorine, bromine, or iodine) may be flowed. Further, it is alsoeffective to heat the entire portion that comes into contact with thevapor-deposition material to prevent the vapor-deposition material fromadhering to the equipments or the like again. At this time, the portionmay be typically heated with radiation heat.

Further, in the present specification, sublimating again avapor-deposition material adhering to a vapor-deposition mask or aninner wall of a film-forming chamber by heating is referred to as“re-sublimation”, and a vapor-deposition material that is sublimatedagain is referred to as a re-sublimated vapor-deposition material.

DESCRIPTION OF THE DRAWINGS

[FIGS. 1A-1C] Views showing cross-sectional structures of a film-formingchamber according to the present invention.

[FIGS. 2A-2B] Views showing cross-sectional structures of a film-formingchamber of Embodiment 1.

[FIGS. 3A-3B] Views showing structures of a vapor-deposition source anda vapor-deposition source holder of Embodiment 1.

[FIG. 4] A view showing a structure of an upper surface of thefilm-forming chamber of Embodiment 1.

[FIGS. 5A-5B] Views showing cross-sectional structures of a film-formingchamber of Embodiment 2.

[FIG. 6] A view showing a structure of an upper surface of thefilm-forming chamber of Embodiment 2.

[FIG. 7] A view showing cross-sectional structures of a film-formingchamber of Embodiment 3.

[FIG. 8] A view showing a structure of a film-forming apparatus of amulti-chamber system of Embodiment 5.

[FIG. 9] A view showing a structure of a film-forming apparatus of anin-line system of Embodiment 6.

[FIGS. 10A-10B] Flow charts showing the steps of manufacturing alight-emitting device of Embodiment 7.

[FIGS. 11A-11B] Views showing the steps of manufacturing alight-emitting device of Embodiment 8.

[FIGS. 12A-12C] Views showing the steps of manufacturing alight-emitting device of Embodiment 9.

[FIGS. 13A-13C] Views showing the steps of manufacturing alight-emitting device of Embodiment 10.

EMBODIMENTS

A film-forming chamber of a film-forming apparatus for carrying out thepresent invention will be described with reference to FIG. 1. First,FIG. 1A shows a film-forming process using a vapor-deposition material.In a film-forming chamber 101, a substrate 103 is disposed by asubstrate holder 102. The substrate 103 intends to include a state inwhich a thin film is provided on a substrate surface. That is, asubstrate in the process of forming a device is also included.

Further, a vapor-deposition mask 104 is provided in the vicinity of thesubstrate 103, and the vapor-deposition mask 104 is supported by a maskholder 105. Further, an adhesion preventing shield 106 is provided on aninner side of an inner wall of the film-forming chamber 101 so that avapor-deposition material will not adhere to the inner wall of thefilm-forming chamber 101.

In this state, vapor-deposition sources 108 provided at avapor-deposition source holder 107 are moved in a direction indicated byan arrow in the figure, whereby a vapor-deposition material 109sublimated from the vapor-deposition sources 108 is formed into a filmon the substrate 103. A vapor-deposition shield 110 is a shield forcovering the vapor-deposition sources 108 until sublimation from thevapor-deposition sources 108 is stabilized.

Further, although not shown, the vapor-deposition source holder 107 is aholder in a rectangular shape that extends in a direction vertical tothe drawing surface. On the vapor-deposition source holder 107, aplurality of vapor-deposition sources 108 are arranged.

Herein, the substrate holder 102, the vapor-deposition mask 104, themask holder 105, the adhesion preventing shield 106, and the vapordeposition shield 110 are disposed in the film-forming chamber, and theyare equipments to which the vapor-deposition material 109 adheres.According to the present invention, in order to heat thevapor-deposition material adhering to these equipments, it is preferableto use a material with high heat resistance as a material for theequipments.

More specifically, metal with a high melting point such as tungsten,tantalum, titanium, chromium, nickel, and molybdenum, or an alloycontaining these elements may be used. Further, metal such as stainlesssteel, Inconel, and Hastelloy may also be used. Further, a chromiumoxide film or a tantalum oxide film may be provided on the surface ofthese metals as a protective film.

Note that, in the case where gas is flowed in the film-forming chamberwhen the vapor-deposition material is re-sublimated, it is required touse metal with corrosion resistance to the gas.

Next, FIG. 1B shows a state of the film-forming chamber 101 after thefilm-forming process shown in FIG. 1A is repeated a plurality of times.FIG. 1B shows a state after the substrate 103 is taken out of thefilm-forming chamber. In this state, the vapor-deposition materialadheres to the substrate holder 102, the vapor-deposition mask 104, themask holder 105, the adhesion preventing shield 106, and thevapor-deposition shield 110 by repeated vapor deposition. FIG. 1B showsan adhering vapor-deposition material 111 by a dotted line.

Next, FIG. 1C shows a process (cleaning process) of re-sublimation andexhaust. Herein, the vapor-deposition material 111 adhering to thesubstrate holder 102, the vapor-deposition mask 104, the mask holder105, the adhesion preventing shield 106, and the vapor-deposition shield110 is heated and re-sublimated, thereby being desorbed from theequipments again. As a heating method, heating with a heater, heatingwith infrared light, or heating with UV-light may be used, or acombination thereof may be used.

A vapor-deposition material 112 thus re-sublimated is immediatelyexhausted through an exhaust port 113 by using a vacuum pump (notshown). As a vacuum pump, any known pump may be used.

Further, gas containing a halogen-group element may be flowed in thefilm-forming chamber 101 when the process of re-sublimation and exhaustshown in FIG. 1C is conducted. Herein, re-sublimation is conducted whilegas containing fluorine is flowed, and simultaneously, thevapor-deposition material is exhausted as fluoride.

According to a series of processes described with reference to FIGS.1A-1C, a cleaning process is conducted after a film-forming process isconducted a plurality of times. However, a cleaning process can also beconducted for each film-forming process.

[Embodiment 1]

In this embodiment, a method of cleaning a film-forming apparatus willbe described, which is characterized in that equipments provided in afilm-forming apparatus are irradiated with infrared light, UV-light, orvisible light to sublimate a vapor-deposition material adhering to theequipments, and the sublimated vapor-deposition material is exhausted.The present example is one example of the present invention, and cancite the above description.

FIGS. 2A-2B show cross-sectional structures of a film-forming portion ina film-forming apparatus of this embodiment. FIGS. 2A and 2B showcross-sectional structures taken in directions vertical to each other.FIG. 2A shows a cross-section in an X-direction, and FIG. 2B shows across-section in a Y-direction. FIG. 4 is a top view of the film-formingportion in the film-forming apparatus of this embodiment.

In FIGS. 2A and 2B, a substrate holder 202 is provided in a film-formingchamber 201, and a substrate 203 is supported by the substrate holder202. In this case, a substrate surface facing downward in the figure isa surface on which a thin film is to be formed.

Further, a vapor-deposition mask 204 is provided in the vicinity of thesubstrate 203. The vapor-deposition mask 204 is supported by a maskholder 205, and the distance between the vapor-deposition mask 204 andthe substrate 203 can be adjusted by rendering the mask holder 205variable.

Further, an adhesion preventing shield 206 is provided so as to surroundthe substrate 203, the vapor-deposition mask 204, and the mask holder205. A region denoted with 207 in the adhesion preventing shield 206 cancover a vapor-deposition source until a sublimation speed of avapor-deposition material is stabilized. More specifically, the regioncan have the same role as that of the vapor-deposition shield 110 shownin FIG. 1A.

Further, in a lower portion of the film-forming chamber 201, avapor-deposition source holder 209 equipped with vapor-depositionsources 208 and a lamp light source 210 are attached to a rail 211. Morespecifically, the film-forming portion of this embodiment is providedwith a mechanism for moving the vapor-deposition sources 208 and thelamp light source 210 along the rail 211. Further, infrared light,UV-light, or visible light are radiated by the lamp light source 210.

Herein, FIG. 3A shows structures of the vapor-deposition source 208 andthe vapor-deposition source holder 209. As shown in FIG. 3A, thefilm-forming portion of this embodiment has a structure in which aplurality of vapor-deposition sources 208 are arranged on thevapor-deposition source holder 209 in an elongated rectangular shape.The number of vapor-deposition sources .208 is not limited, and thearrangement interval thereof may also be appropriately determined

FIG. 3B shows a structure of the vapor-deposition source 208. Thevapor-deposition source 208 shown in FIG. 3B is used for forming anorganic EL material into a film, and provided with nozzles 214 for ahost material for vapor-depositing a host material and nozzles 215 for aguest material for vapor-depositing a guest material.

At this time, the movement speed of the vapor-deposition sources 208 andthe sublimation speed of the vapor-deposition material are controlled bya control unit 212. Similarly, the movement speed and illumination ofthe lamp light source 210 are also controlled by the control unit 212.Further, the movement speed and sublimation speed of thevapor-deposition sources 208 should be controlled by giving feedback onthe results of monitoring a film thickness of the vapor-depositionmaterial formed on the substrate 203 with a film thickness meter.Further, this control can also be conducted individually for eachvapor-deposition source. In this case, by partitioning the substrate 203in a matrix, setting a plurality of crystal oscillators so that theycorrespond to the respective partitions, and controlling thevapor-deposition speed of each vapor-deposition source, the uniformityof a film thickness can be enhanced.

Further, as the lamp light source 210, a lamp emitting infrared light(infrared light lamp), a lamp emitting UV-light (UV-light lamp), or alamp emitting visible light (typically, a halogen lamp) is used.Further, the shape of the lamp light source 210 is a rectangle or anoblong, so that it can irradiate a large area at once by irradiationduring movement. More specifically, an irradiated surface (surface of aequipment to which light is radiated) of infrared light, UV-light, orvisible light emitted from the lamp light source 210 becomes a rectangleor an oblong.

According to the present invention, after the substrate 203 is taken outof the film-forming chamber 201, the vapor-deposition material adheringto the vapor-deposition mask 204, the mask holder 2.05, and the adhesionpreventing shield 206 is irradiated with infrared light, UV-light, orvisible light emitted from the lamp light source 210. Then, thevapor-deposition material is re-sublimated by light irradiation, andexhausted through an exhaust port 213 by using a vacuum pump (notshown). Although depending upon the temperature for sublimating thevapor-deposition material, it is preferable to use infrared light thatis likely to generate heat by absorption.

It is also effective to form a thin film (light-absorbing film) that islikely to absorb infrared light, UV-light, or visible light on an innerside of the adhesion preventing shield 206 and the surface of the maskholder 205. More specifically, infrared light, UV-light, or visiblelight is once allowed to be absorbed by the light-absorbing film, andthe adhering vapor-deposition material may be re-sublimated by heatconduction from the light-absorbing film.

The film-forming apparatus of this embodiment enables cleaning in thefilm-forming chamber by very simple means; more specifically, theapparatus includes means (specifically, a lamp light source) forirradiating infrared light, UV-light, or visible light to equipmentsprovided in the film-forming chamber, and uses the means to re-sublimatea vapor-deposition material adhering to the equipments or avapor-deposition mask so as to exhaust (remove) the material. Further,the film-forming apparatus of this embodiment has conspicuous featuresthat cleaning in the film-forming chamber can be conducted withoutexposing the inside of the chamber to the atmosphere. Therefore, theconventional problem of adsorbed water or oxygen can be avoided.

Further, as shown in this embodiment, by prescribing a lamp light sourcein a rectangular or oblong shape, a large area can be irradiated byscanning (movement) at once. Thus, a time required for a cleaningprocess can be shortened, which enhances throughput.

[Embodiment 2]

In this embodiment, a method of cleaning a film-forming apparatus willbe described, which is characterized in that equipments provided in afilm-forming chamber are heated with radiation heat to sublimate avapor-deposition material adhering to the equipments, and the sublimatedvapor-deposition material is exhausted. Radiation heat may be generatedby flowing a current through a metal line (typically, a nichrome line)with high electrical resistance. Further, this embodiment is one exampleof the present invention, and can cite the above description.

FIGS. 5A-5B show cross-sectional structures of a film-forming portion ina film-forming apparatus of this embodiment. FIGS. 5A and 5B showcross-sectional structures taken in directions vertical to each other.FIG. 5A shows a cross-section in an X-direction, and FIG. 5B shows across-section in a Y-direction. Further, FIG. 6 is a top view of thefilm-forming portion in the film-forming apparatus of this embodiment.

In FIGS. 5A and 5B, a substrate holder 502 is provided in a film-formingchamber 501, and a substrate 503 is supported by the substrate holder502. In this case, a substrate surface facing downward in the figure isa surface on which a thin film is to be formed.

Further, a vapor-deposition mask 504 is provided in the vicinity of thesubstrate 503. The vapor-deposition mask 504 is supported by a maskholder 505, and the distance between the vapor-deposition mask 504 andthe substrate 503 can be adjusted by rendering the mask holder 505variable.

Further, an adhesion preventing shield 506 is provided so as to surroundthe substrate 503, the vapor-deposition mask 504, and the mask holder505. A region denoted with 507 in the adhesion preventing shield 506 cancover vapor-deposition sources until a sublimation speed of avapor-deposition material is stabilized. More specifically, the regioncan have the same role as that of the vapor-deposition shield 110 shownin FIG. 1A.

Further, on the periphery of the adhesion preventing shield 506, heatingwires (in this embodiment, nichrome lines) 508 are provided in contacttherewith. In this embodiment, by flowing a current through the heatingwires 508, the entire adhesion preventing shield 506 can be heated.

Further, a reflective plate 509 is provided so as to cover the adhesionpreventing shield 506. The reflective plate 509 may be one or providedin a plurality of number. The reflective plate 509 is provided for thepurpose of reflecting radiation heat from the adhesion preventing shield506 and the heating wires 508 to efficiently heat the adhesionpreventing shield 508. Further, it is also effective to minimize heatingof the inner wall of the film-forming chamber 501. As a material for thereflective plate 509, it is preferable to use metal with a highreflectivity. Further, in the case of flowing gas in the film-formingchamber 501, it is required to use metal with corrosion resistance tothe gas.

Further, in a lower portion of the film-forming chamber 501, avapor-deposition source holder 511 equipped with vapor-depositionsources 510 is attached to a rail 512. More specifically, thefilm-forming portion of this embodiment is provided with a mechanism formoving the vapor-deposition sources 510 along the rail 512. Thestructures of the vapor-deposition sources 510 and the vapor-depositionsource holder 511 are as shown in FIGS. 3A-3B.

Further, the movement speed of the vapor-deposition sources 510 and thesublimation speed of the vapor-deposition material are controlled by acontrol unit 513. In this embodiment, the movement speed and sublimationspeed of the vapor-deposition sources 510 are controlled by givingfeedback on the results of monitoring a film thickness of thevapor-deposition material formed on the substrate 503 with a filmthickness meter. Further, this control is conducted individually foreach vapor-deposition source. In this case, by partitioning thesubstrate 503 in a matrix, setting a plurality of crystal oscillators sothat they correspond to the respective partitions, and controlling thevapor-deposition speed of each vapor-deposition source, the uniformityof a film thickness can be enhanced.

According to the present invention, by flowing a current through theheating wires 507 after the substrate 503 is taken out of thefilm-forming chamber 501, the adhesion preventing shield 506 is heated,and the adhesion material adhering to the adhesion preventing shield 506is re-sublimated. Then, the vapor-deposition material is exhaustedthrough an exhaust port 514 by using a vacuum pump (not shown). Althoughdepending upon the temperature for sublimating the vapor-depositionmaterial, an organic material would be sufficiently sublimated even at atemperature of 500° C. or lower.

The film-forming apparatus of this embodiment enables cleaning in thefilm-forming chamber by very simple means; more specifically, aequipment provided in the film-forming chamber is equipped withconductors (heating wires, specifically, nichrome lines) for heating theequipment with radiation heat, and a current is flowed through theconductors to re-sublimate the vapor deposition material adhering to theequipment and exhaust (remove) it. Further, since cleaning in thefilm-forming chamber is possible without exposure to the atmosphere, theconventional problem of adsorbed water or oxygen can be avoided.

[Embodiment 3]

In this embodiment, a film-forming apparatus will be described in whichan exhaust treatment chamber is connected to a film-forming chamber. Inthe film-forming apparatus of this embodiment shown in FIG. 7, afilm-forming chamber 702 has the same structure as that shown in FIG.2A, and an exhaust treatment chamber 701 is connected in series to thefilm-forming chamber 702. Thus, regarding the film-forming chamber 702,Embodiment 1 will be referred to, and the exhaust treatment chamber 701will be mainly described.

In FIG. 7, the exhaust treatment chamber 701 is connected to thefilm-forming chamber 702 through a gate 703. The gate 703 plays a rolein preventing exhaust gas from being mixed in the film-forming chamber702 from the exhaust treatment chamber 701. Heating wires 704 areprovided at a pipe in the vicinity of the gate 703, and the pipe 705 canbe heated. The heating wires 704 are provided so as to prevent thevapor-deposition material exhausted from the film-forming chamber 701from adhering to the pipe 705.

In the exhaust treatment chamber 701, an upper electrode 706 and a lowerelectrode 707 are provided in the exhaust treatment chamber 701, and ahigh-frequency power supply 708 is connected to the upper electrode 706.Further, the lower electrode 707 is grounded. Further, gas for formingplasma can be supplied to the inside of the exhaust treatment chamber701, and by applying a voltage between the upper electrode 706 and thelower electrode 707, plasma 709 can be formed.

The vapor-deposition material exhausted from the film-forming chamber702 is exposed to the plasma 709 in the exhaust treatment chamber 701,and changed to inactive gas by decomposition or bonding to be exhaustedfrom an exhaust port 710. More specifically, the re-sublimatedvapor-deposition material is exposed to plasma during the exhaust andchanged to inactive gas; therefore, there will not be a problem that thevapor-deposition material adheres onto the pipe after the exhaust port710.

If the vapor-deposition material is an organic material (including anorganic EL material), it is preferable to use oxygen as gas for formingplasma and to process the vapor-deposition material with oxygen plasma.However, care should be taken so that oxygen remaining in the exhausttreatment chamber 701 will not flow in a reverse direction to thefilm-forming chamber 702.

Note that the structure of this embodiment may be combined with eitherof Embodiment 1 or 2.

[Embodiment 4]

In this embodiment, the case will be described in which gas containing ahalogen-group element is flowed in a film-forming chamber when avapor-deposition material adhering to equipments is re-sublimated in afilm-forming apparatus with the structure of either of Embodiments 1 to3.

Typical examples of the halogen-group element include fluorine,chlorine, bromine, and iodine. Typical examples of the gas containingthese halogen-group elements include fluorine (F₂) gas, chlorine (Cl₂)gas, and carbon tetrafluoride (CF₄) gas.

In this embodiment, a re-sublimated vapor-deposition material is reactedwith the above-mentioned gas containing a halogen-group element to bechanged to inactive gas, whereby the vapor-deposition material isprevented from adhering to the equipments, pipes, and inner walls of thefilm-forming chamber again.

The structure of this embodiment can be combined with either ofEmbodiments 1 to 3.

[Embodiment 5]

In this embodiment, a film-forming apparatus will be described in whicha plurality of film-forming chambers with the structure of either ofEmbodiments 1 to 4 are provided by a multi-chamber system (also called acluster tool system). FIG. 8 shows a schematic view of a film-formingapparatus of this embodiment. In this embodiment, a film-formingapparatus for forming an EL element is shown.

In FIG. 8, reference numeral 801 denotes a transport chamber, and thetransport chamber 801 is provided with a transport mechanism (A) 802 fortransporting a substrate 803. The transport chamber 801 is exposed tothe reduced-pressure atmosphere, and is connected to each treatmentchamber via a gate. The substrate is transferred to each treatmentchamber by the transport mechanism (A) 802 when the gate is opened.Further, in order to reduce the pressure in the transport chamber 801,an exhaust pump such as an oil rotary pump, a mechanical boster pump, aturbo molecular pump, or a cryopump can be used. However, a cryopumpthat is effective for removing moisture is preferable.

Hereinafter, each treatment chamber will be described. Since thetransport chamber 801 is exposed to the reduced-pressure atmosphere, anexhaust pump (not shown) is provided in each treatment chamber directlyconnected to the transport chamber 801. As the exhaust pump, theabove-mentioned oil rotary pump, mechanical boster pump, turbo molecularpump, or cryopump is used.

First, reference numeral 804 denotes a load chamber for setting asubstrate, and is referred to as a load lock chamber. The load chamber804 is connected to the transport chamber 801 via a gate 800 a,in whicha carrier (not shown) on which the substrate 803 is set is disposed. Theload chamber 804 may be separated into a portion for input of asubstrate and a portion for output of a substrate. Further, the loadchamber 804 is provided with the above-mentioned exhaust pump and apurge line for introducing high-purity nitrogen gas or noble gas.

Next, reference numeral 805 denotes a pretreatment chamber for treatingthe surface of a positive electrode or a negative electrode (in thisembodiment, a positive electrode) of an EL element, and the pretreatmentchamber 805 is connected to the transport chamber 801 via a gate 800 b.The pretreatment chamber may be changed variously depending upon themanufacturing process of EL elements. In this embodiment, thepretreatment chamber is designed in such a manner that the positiveelectrode can be heated at 100° C. to 120° C. while the surface of thepositive electrode made of a conductive oxide film is irradiated withUV-light. Such pretreatment is effective for treating the surface of apositive. electrode of an EL element.

Next, reference numeral 806 denotes a film-forming chamber for formingan organic material and an organic EL material into films by vapordeposition, and referred to as a film-forming chamber (A). Thefilm-forming chamber (A) 806 is connected to the transport chamber 801via a gate 800 c. In this embodiment, as the vapor-deposition chamber(A) 806, the film-forming portion shown in Embodiment 1 or 2 isprovided. In this embodiment, in the film-forming chamber (A) 806, anorganic material to be a hole injection layer and an organic EL materialto be a light-emitting layer that develops red color are formed intofilms. Thus, a vapor-deposition source and a vapor-deposition mask areprovided in two kinds so that switching can be made.

Next, reference numeral 807 denotes a film-forming chamber for formingan organic EL material into a film by vapor deposition, and is referredto as a film-forming chamber (B). The film-forming chamber (B) 807 isconnected to the transport chamber 801 via a gate 800 d. In thisembodiment, as the film-forming chamber (B) 807, the film-formingchamber shown in Embodiment 1 or 2 is provided. In this embodiment, inthe film-forming chamber (B) 807, an organic EL material to be alight-emitting layer that develops green color is formed into a film.

Next, reference numeral 808 denotes a film-forming camber for forming anorganic EL material into a film by vapor deposition, and is referred toas a film-forming chamber (C). The film-forming chamber (C) 808 isconnected to the transport chamber 801 via a gate 800 e. In thisembodiment, the film-forming chamber shown in Embodiment 1 or 2 isprovided as the film-forming chamber (C) 808. In this embodiment, in thefilm-forming chamber (C) 808, an organic EL material to be alight-emitting layer that develops blue color is formed into a film.

Next, reference numeral 809 denotes a film-forming chamber for forming aconductive film to be a positive electrode or a negative electrode (inthis embodiment, a metal film to be a negative electrode) of a ELelement by vapor deposition, and is referred to as a film-formingchamber (D). The film-forming chamber (D) 809 is connected to thetransport chamber 801 via a gate 800 f. In this embodiment, as thefilm-forming chamber (D) 809, the film-forming chamber shown inEmbodiment 1 or 2 is provided. In this embodiment, in the film-formingchamber (D) 809, an Al—Li alloy film (alloy film of aluminum andlithium) is formed as a conductive film to be a negative electrode of anEL element. An element belonging to Group I or Group II of the periodictable and aluminum can be vapor-deposited together.

Next, reference numeral 810 denotes a sealing chamber that is connectedto the load chamber 804 via a gate 800 g. The sealing chamber 810 isprovided with a UV-lamp 811. Further, the sealing chamber 810 isconnected to a transfer chamber 812. The transfer chamber 812 isprovided with a transfer mechanism (B) 813 that transports a substratewhich is completed for sealing of an EL element in the sealing chamber810 to the transfer chamber 812.

At this time, in the sealing chamber 810, the step of sealing(enclosing) a formed EL element into a sealed space is conducted. Morespecifically, a sealant is attached to an EL element with UV-curableresin so as to cover it, and the UV-curable resin is cured with UV-lightemitted from a UV-light lamp 811 to seal the EL element.

As described above, by using the film-forming apparatus shown in FIG. 8,an EL element is not exposed to the outside air until it is sealed in asealed space completely. Therefore, a light-emitting device with highreliability can be manufactured.

Further, by using the film-forming chamber of the present invention asthe film-forming chamber (A) 806, the film-forming chamber (B) 807, thefilm-forming chamber (C) 808, and the film-forming chamber (D) 809, eachfilm-forming chamber can be cleaned without being exposed to theatmosphere. Thus, a light emitting device with higher reliability can bemanufactured.

[Embodiment 6]

In this embodiment, a film-forming apparatus will be described in whicha plurality of film forming chambers with the structure of either ofEmbodiments 1 to 4 are provided in an in-line system. FIG. 9 shows aschematic view of a film-forming apparatus of this embodiment. In thisembodiment, a film-forming apparatus for forming an EL element will beshown.

In FIG. 9, reference numeral 901 denotes a load chamber, from which asubstrate 90 is transported. The load chamber 901 is provided with anexhaust system 900 a. The exhaust system 900 a includes a first valve91, a turbo molecular pump 92, a second valve 93, and a rotary pump (oilrotary pump) 94.

The first valve 91 is a main valve, which may also function as aconductance valve or use a butterfly valve. The second valve 93 is afore valve. First, the second valve 93 is opened, and the pressure inthe load chamber 901 is roughly reduced by the rotary pump 94. Then, thefirst valve 91 is opened, and the pressure of the load chamber 901 isreduced to high vacuum by the turbo molecular pump 92. A mechanicalbuster pump or a cryopump can be used in place of the turbo molecularpump. The cryopump is particularly effective for removing moisture.

Next, reference numeral 902 denotes a pretreatment chamber for treatingthe surface of a positive electrode or a negative electrode (in thisembodiment, a positive electrode) of an EL element, and the pretreatmentchamber 902 is provided with an exhaust system 900 b. Further, thepretreatment chamber 902 is sealed by a gate (not shown) so as to beisolated from the load chamber 901. The pretreatment chamber 902 can bechanged variously depending upon the manufacturing process of an ELelement.

As the pretreatment, ozone plasma treatment, oxygen plasma treatment,argon plasma treatment, neon plasma treatment, helium plasma treatment,or hydrogen plasma treatment can be conducted. Further, by providing aheater, heating can be conducted simultaneously with plasma treatment.Further, it is also effective to enable UV-light irradiation to beconducted by providing a UV-light lamp.

In this embodiment, the surface of a positive electrode made of aconductive oxide film is subjected to ozone plasma treatment while thesubstrate is being heated at 100° C., whereby pretreatment for enhancinga work function of the surface of the positive electrode is conductedwhile moisture is being removed.

Next, reference numeral 903 denotes a film-forming chamber for formingan organic material into a film by vapor deposition, and referred to asa film-forming chamber (A). The film-forming chamber (A) 903 is providedwith an exhaust system 900 c. The film-forming chamber (A) 903 is sealedby a gate (not shown) so as to be isolated from the pretreatment chamber902. In this embodiment, the film-forming chamber shown in Embodiment 1or 2 is used as the film-forming chamber (A) 903, and a hole injectionlayer is formed in the film-forming chamber (A) 903.

Next, reference numeral 904 refers to a film-forming chamber for formingan organic material into a film by vapor deposition, and is referred toas a film-forming chamber (B). The film-forming chamber (B) 904 isprovided with an exhaust system 900 d. Further, the film-forming chamber(B) 904 is sealed by a gate (not shown) so as to be isolated from thefilm-forming chamber (A) 903. In this embodiment, as the film-formingchamber (B) 904, the film-forming chamber shown in Embodiment 1 or 2 isused, and a hole transport layer is formed in the film-forming chamber(B) 904.

Next, reference numeral 905 refers to a film-forming chamber for formingan organic EL material into a film by vapor deposition, and is referredto as a film-forming chamber (C). The film-forming chamber (C) 905 isprovided with an exhaust system 900 e. Further, the film-forming chamber(C) 905 is sealed by a gate (not shown) so as to be isolated from thefilm-forming chamber (B) 904. In this embodiment, as the film-formingchamber (C) 905, the film-forming chamber shown in Embodiment 1 or 2 isused, and a light-emitting layer that develops red color is formed inthe film-forming chamber (C) 905.

Next, reference numeral 906 refers to a film-forming chamber for formingan organic EL material into a film by vapor deposition, and is referredto as a film-forming chamber (D). The film-forming chamber (D) 906 isprovided with an exhaust system 900 f. Further, the film-forming chamber(D) 906 is sealed by a gate (not shown) so as to be isolated from thefilm-forming chamber (C) 905. In this embodiment, as the film-formingchamber (D) 906, the film-forming chamber shown in Embodiment 1 or 2 isused, and a light-emitting layer that develops green color is formed inthe film-forming chamber (D) 906.

Next, reference numeral 907 refers to a film-forming chamber for formingan organic EL material into a film by vapor deposition, and is referredto as a film-forming chamber (E). The film-forming chamber (E) 907 isprovided with an exhaust system 900 g. Further, the film-forming chamber(E) 907 is sealed by a gate (not shown) so as to be isolated from thefilm-forming chamber (ID) 906. In this embodiment, as the film-formingchamber (E) 907, the film-forming chamber shown in Embodiment 1 or 2 isused, and a light-emitting layer that develops blue color is formed inthe film-forming chamber (E) 907.

Next, reference numeral 908 refers to a film-forming chamber for formingan organic material into a film by vapor deposition, and is referred toas a film-forming chamber (F). The film-forming chamber (F) 908 isprovided with an exhaust system 900 h. Further, the film-forming chamber(F) 908 is sealed by a gate (not shown) so as to be isolated from thefilm-forming chamber (E) 907. In this embodiment, as the film-formingchamber (F) 908, the film-forming chamber shown in Embodiment 1 or 2 isused, and an electron transport layer is formed in the film-formingchamber (F) 908.

Next, reference numeral 909 refers to a film-forming chamber for formingan organic material into a film by vapor deposition, and is referred toas a film-forming chamber (G). The film-forming chamber (G) 909 isprovided with an exhaust system 900 i. Further, the film-forming chamber(G) 909 is sealed by a gate (not shown) so as to be isolated from thefilm-forming chamber (F) 908. In this embodiment, as the film-formingchamber (G) 909, the film-forming chamber shown in Embodiment 1 or 2 isused, and an electron injection layer is formed in the film-formingchamber (G) 909.

Next, reference numeral 910 refers to a film-forming chamber for forminga conductive film to be a positive electrode or a negative electrode (inthis embodiment, a metal film to be a negative electrode) of an ELelement by vapor deposition, and is referred to as a film-formingchamber (H). The film-forming chamber (H) 910 is provided with anexhaust system 900 j. Further, the film-forming chamber (H) 910 issealed by a gate (not shown) so as to be isolated from the film-formingchamber (G) 909. In this embodiment, as the film-forming chamber (H)910, the film-forming chamber shown in Embodiment 1 or 2 is used.

Further, in this embodiment, in the film-forming chamber (H) 910, anAl—Li alloy film (alloy film of aluminum and lithium) or an Al—Cs alloyfilm (alloy film of aluminum and cesium) is formed as a conductive filmto be a negative electrode of an EL element. An element belonging toGroup I or Group II of the periodic table and aluminum can bevapor-deposited together.

Next, reference numeral 911 denotes a sealing chamber, which is providedwith an exhaust system 900 k. Further, the sealing chamber 911 is sealedby a gate (not shown) so as to be isolated from the film-forming chamber(H) 910. In the sealing chamber 911, in order to protect an EL elementfrom oxygen and moisture, a carbon film, more specifically, a DLC(diamond-like carbon) film is formed as a passivation film.

In order to form the DLC film, sputtering, plasma CVD, or ion platingmay be used. In the case of using ion plating, the film-formingapparatus with the structure of Embodiment 1 may be used. In the case ofion plating, unlike ordinary vapor deposition, an electrode for applyingan electric field thereto is required. However, a vapor-depositionmaterial adhering to the electrode may be re-sublimated by lightirradiation from a lamp light source and exhausted.

The DLC film can be formed in a temperature range from room temperatureto 100° C., so that the DLC film is preferable as a passivation film forprotecting an EL element with low heat resistance. Further, the DLC filmhas high heat conductivity and a good heat radiation effect; therefore,the effect of suppressing thermal degradation of an EL element can alsobe expected. It is also effective that the DLC film formed in thisembodiment is used by being stacked with a silicon nitride film or asilicon carbide film.

Finally,reference numeral 912 denotes an unload chamber, which isprovided with an exhaust system 900 l. A substrate with an EL elementformed thereon is taken out from the unload chamber 912.

It is effective to operate each treatment chamber, exhaust system, andtransport system in the film-forming apparatus shown in this embodimentby computer control. In the case of this embodiment, since an EL elementis completed by continuously conducting a series of treatments, theinput of a substrate to the output thereof can be managed by computercontrol.

As described above, by using the film-forming apparatus shown in FIG. 9,an EL element is not required to be exposed to the outer atmosphereuntil it is completely sealed in a sealed space. Therefore, an ELdisplay apparatus with high reliability can be manufactured. Further,due to the in-line system, an EL display apparatus with high throughputcan be manufactured.

Further, by using the film-forming chamber of the present invention asthe film-forming chamber (A) 903, the film-forming chamber (B) 904; thefilm-forming chamber (C) 905, the film-forming chamber (D) 906, thefilm-forming chamber (E) 907, the film-forming chamber (F) 908, thefilm-forming chamber (G) 909, and the film-forming chamber (H) 910, eachfilm-forming chamber can be cleaned without being exposed to theatmosphere. Thus, a light-emitting device with high reliability can bemanufactured.

[Embodiment 7]

In this embodiment, a method of manufacturing an electro-optical device(in this embodiment, a light-emitting device including an EL element)including the cleaning method with the structure of either ofEmbodiments 1 to 4 will be described.

Each flowchart in FIGS. 10A-10B shows a flow of the steps ofmanufacturing a light-emitting device in this embodiment. First, FIG.10A shows an example in which a film-forming apparatus is cleaned by themethod of either of Embodiments 1 to 4 every time an organic material(also containing an organic EL material) for forming an EL element isformed into a film. In this case, the film-forming apparatus ofEmbodiment 5 or 6 may be used.

In this case, after the step of manufacturing a TFT on an insulator (TFTmanufacturing step), the step of forming an organic material for formingan EL element into a film (film-forming step of an organic material) isconducted, and the step of sealing an EL element (sealing step) isconducted, whereby a light-emitting device is completed. In these seriesof manufacturing steps, immediately after the film-forming step of anorganic material is completed, the step of cleaning the film-formingapparatus is conducted, and thereafter, the subsequent film-forming stepof an organic material is conducted.

A method of manufacturing an active matrix type light-emitting deviceincludes the step of manufacturing a TFT. However, a method ofmanufacturing a passive matrix type light-emitting device or a lightsource including an EL element does not include the step ofmanufacturing a TFT. In this respect, the step of manufacturing a TFT isrepresented by using parentheses.

Next, FIG. 10B shows an example in which a film-forming apparatus iscleaned by the method of either of Embodiments 1 to 4 after thefilm-forming step of an organic material (also including an organic ELmaterial) for forming an EL element is conducted a plurality of times.More specifically, when the film thickness of a vapor-depositionmaterial adhering to equipments provided in a film-forming chamberreaches a film thickness to some degree, the cleaning step isperiodically conducted.

In this case, in the steps of manufacturing a light-emitting devicecontinuously conducted, after the film-forming step of an organicmaterial is conducted with respect to a plurality of substrates, thestep of cleaning the film-forming apparatus is conducted, andthereafter, the subsequent film-forming step of an organic material isconducted.

[Embodiment 8]

In this embodiment, exemplary steps of manufacturing a passive matrixtype light-emitting device including an EL element will be described.

First, as shown in FIG. 11A, a positive electrode 12 made of aconductive oxide film is formed on a substrate 11 with an insulatingfilm formed on a surface thereof, and partition walls 13 are formed onthe positive electrode 12. The partition wall 13 is composed of a firstpartition wall portion 13 a made of a silicon oxide film, a secondpartition wall portion 13 b made of a resin film, and a third partitionwall portion 13 c made of a silicon nitride film.

At this time, the first partition wall portion 13 a may be patterned byphotolithography. Further, the shapes of the second partition wallportion 13 b and the third partition wall portion 13 c are obtained byetching a resin film to be the second partition wall portion 13 b and aresin film to be the third partition wall portion 13 c to the sameshape, and thereafter, etching the resin film to be the second partitionwall portion 13 b in an isotropic manner, using the third partition wallportion 13 c as a mask.

Next, the step of forming an organic material for forming an EL elementinto a film by using the film-forming apparatus shown in Embodiment 5 isconducted. First, surface treatment of the positive electrode 12 isconducted in the pretreatment chamber 805, and a hole injection layer 14and a light-emitting layer (R) 15 are formed in the film-forming chamber(A) 806. The light-emitting layer (R) is a light-emitting layer thatemits red light.

Next, a light-emitting layer (G) 16 is formed in the film-formingchamber (B) 807, and a light-emitting layer (B) 17 is formed in thefilm-forming chamber (C) 808. The light-emitting layer (G) is alight-emitting layer that emits green light, and the light-emittinglayer (B) is a light-emitting layer that emits blue light.

Next, an Al—Li alloy film obtained by vapor-depositing aluminum (Al) andlithium (Li) together is formed as a negative electrode 18. Then, asealing step is conducted in the sealing chamber 810, whereby a passivematrix type light-emitting device is completed.

At this time, after the hole injection layer 14, the light-emittinglayer (R) 15, the light-emitting layer (G) 16, the light-emitting layer(B) 17, or the negative electrode 18 is formed, cleaning of eachfilm-forming chamber may be conducted by using the structure shown ineither of Embodiments 1 to 4. It is appreciated that cleaning may beconducted for each film formation as shown in FIGS. 10A-10B, or cleaningmay be conducted after the film-forming step is conducted a plurality oftimes.

Further, in this embodiment, the film-forming apparatus shown inEmbodiment 5 is used. However, the film-forming apparatus shown inEmbodiment 6 may be used.

[Embodiment 9]

In this embodiment, exemplary steps of manufacturing an active matrixtype light-emitting device including an EL element will be described.

First, thin film transistors (hereinafter, referred to as “TFTs”) 22 areformed on a substrate 21 with an insulating film formed on its surfaceby a known manufacturing step, as shown in FIG. 12A. Then, as shown inFIG. 12B, a positive electrode 23 made of a conductive oxide film and aninsulating film 24 made of a silicon oxide film are formed.

Then, the step of forming an organic material for forming an EL elementis conducted by using the film-forming apparatus shown in Embodiment 5.First, surface treatment of the positive electrode 23 is conducted inthe pretreatment chamber 805, and a hole injection layer 25 and alight-emitting layer (R) 26 are formed in the film-forming chamber (A)806. The light-emitting layer (R) is a light-emitting layer that emitsred light.

Then, a light-emitting layer (G) 27 is formed in the film-formingchamber (B) 807, and a light-emitting layer (B) 28 is formed in thefilm-forming chamber (C) 808. The light-emitting layer (G) is alight-emitting layer that emits green light, and the light-emittinglayer (B) is a light-emitting layer that emits blue light.

Next, an Al—Li alloy film obtained by co-vapor-depositing aluminum (Al)and lithium (Li) together is formed as a negative electrode 29. Then, asealing step is conducted in the sealing chamber 810, whereby an activematrix type light-emitting device is completed.

At this time, after the hole injection layer 25, the light-emittinglayer (R) 26, the light-emitting layer (G) 27, the light-emitting layer(B) 28, or the negative electrode 29 is formed, cleaning of eachfilm-forming chamber may be conducted by using the structure shown ineither of Embodiments 1 to 4. It is appreciated that cleaning may beconducted for each film formation as shown in FIGS. 10A-10B, or cleaningmay be conducted after the film-forming step is conducted a plurality oftimes.

Further, in this embodiment, the film-forming apparatus shown inEmbodiment 5 is used. However, the film-forming apparatus shown inEmbodiment 6 may be used.

[Embodiment 10]

In Embodiment 9,an example has been shown in which a top gate type TFT(specifically, a planar type TFT) is manufactured as the TFT 22.However, in this embodiment, as shown in FIGS. 13A-130, a TFT 30 is usedin place of the TFT 22. The TFT 30 used in this embodiment is a bottomgate type TFT (specifically, an inverted stagger type TFT) which may beformed by a known manufacturing step.

The other structure is the same as that in Embodiment 9. Therefore, thedetailed description in this embodiment and the description of referencenumerals will be omitted.

By carrying out the present invention, a film-forming apparatus(vapor-deposition apparatus) can be cleaned without exposing equipmentsprovided in the apparatus or the inner wall of a film-forming chamber tothe atmosphere. Therefore, a time required for cleaning the equipmentsor the like can be shortened, which leads to reduction of the steps ofmanufacturing an electro-optical device.

In particular, in the case where a light-emitting device including an ELelement is manufactured by conducting the cleaning method of the presentinvention, degradation of an organic EL material for forming an ELelement due to adsorbed oxygen or water can be reduced; therefore, alight-emitting device with good reliability can be manufactured.

What is claimed is:
 1. A method of manufacturing a device, comprisingthe steps of: disposing a substrate in a film formation chamber, whereinan adhesion preventing shield is provided in the film formation chamberto surround the substrate; disposing a holder in the film formationchamber, the holder having a longitudinal direction, wherein a pluralityof vapor-deposition sources are arranged along the longitudinaldirection on the holder, and wherein each of the plurality ofvapor-deposition sources has a plurality of first nozzles and aplurality of second nozzles surrounded by the plurality of firstnozzles; forming an EL layer comprising an organic material including ahost material and a guest material over the substrate byvapor-depositing the host material and the guest material by using theplurality of first nozzles and the plurality of second nozzles,respectively, wherein a relative position of the substrate with respectto the holder is changed in a direction orthogonal to the longitudinaldirection during the formation of the EL layer; removing the substratefrom the film formation chamber after the EL layer is formed; cleaningthe adhesion preventing shield by removing the organic materialdeposited on the adhesion preventing shield in the film formationchamber after the substrate is removed; and exhausting the organicmaterial from the film formation chamber during cleaning.
 2. The methodfor manufacturing a device according to claim 1, wherein the organicmaterial is removed by sublimating the organic material deposited on theadhesion preventing shield.
 3. The method for manufacturing a deviceaccording to claim 1, wherein the organic material is removed bysublimating the organic material deposited on the adhesion preventingshield by heating.
 4. The method according to claim 1, wherein theholder moves in the direction orthogonal to the longitudinal directionduring the formation of the EL layer.
 5. The method according to claim1, wherein a plasma is formed in an exhaust treatment chamber during theexhausting of the sublimated organic material, and wherein the exhausttreatment chamber is connected with the film formation chamber.
 6. Themethod according to claim 1, wherein the movement speed of the pluralityof vapor-deposition sources are controlled by a control unit during theformation of the EL layer.
 7. A method of manufacturing a device,comprising the steps of: disposing a substrate in a film formationchamber, wherein an adhesion preventing shield is provided in the filmformation chamber to surround the substrate; disposing a holder in thefilm formation chamber, the holder having a longitudinal direction,wherein a plurality of vapor-deposition sources are arranged along thelongitudinal direction on the holder, and wherein each of the pluralityof vapor-deposition sources has a plurality of first nozzles and aplurality of second nozzles surrounded by the plurality of firstnozzles; forming an EL layer comprising an organic material including ahost material and a guest material over the substrate byvapor-depositing the host material and the guest material by using theplurality of first nozzles and the plurality of second nozzles,respectively, wherein a relative position of the substrate with respectto the holder is changed in a direction orthogonal to the longitudinaldirection during the formation of the EL layer; removing the substratefrom the film formation chamber after the EL layer is formed; cleaningthe adhesion preventing shield by removing the organic materialdeposited on the adhesion preventing shield in the film formationchamber after the substrate is removed; and exhausting the organicmaterial from the film formation chamber during cleaning, wherein anedge of the substrate is parallel with the longitudinal direction of theholder.
 8. The method for manufacturing a device according to claim 7,wherein the organic material is removed by sublimating the organicmaterial deposited on the adhesion preventing shield.
 9. The method formanufacturing a device according to claim 7, wherein the organicmaterial is removed by sublimating the organic material deposited on theadhesion preventing shield by heating.
 10. The method according to claim7, wherein the holder moves in the direction orthogonal to thelongitudinal direction during the formation of the EL layer.
 11. Themethod according to claim 7, wherein a plasma is formed in an exhausttreatment chamber during the exhausting of the sublimated organicmaterial, and wherein the exhaust treatment chamber is connected withthe film formation chamber.
 12. A method of manufacturing a device,comprising the steps of: disposing a substrate in a film formationchamber, wherein an adhesion preventing shield is provided in the filmformation chamber to surround the substrate; arranging a plurality ofvapor-deposition sources along one direction in the film formationchamber, and wherein each of the plurality of vapor-deposition sourceshas a plurality of first nozzles with and a plurality of second nozzlessurrounded by the plurality of first nozzles; forming an EL layercomprising an organic material including a host material and a guestmaterial over the substrate by vapor-depositing the host material andthe guest material by using the plurality of first nozzles and theplurality of second nozzles, respectively, wherein a relative positionof the substrate with respect to the plurality of vapor-depositionsources is changed in a direction orthogonal to the one direction duringthe formation of the EL layer; removing the substrate from the filmformation chamber after the EL layer is formed; cleaning the adhesionpreventing shield by removing the organic material deposited on theadhesion preventing shield in the film formation chamber after thesubstrate is removed; and exhausting the organic material from the filmformation chamber during cleaning.
 13. The method for manufacturing adevice according to claim 12, wherein the organic material is removed bysublimating the organic material deposited on the adhesion preventingshield.
 14. The method for manufacturing a device according to claim 12,wherein the organic material is removed by sublimating the organicmaterial deposited on the adhesion preventing shield by heating.
 15. Themethod according to claim 12, wherein the plurality of vapor-depositionsources move in the direction orthogonal to the one direction during theformation of the EL layer.
 16. The method according to claim 12, whereina plasma is formed in an exhaust treatment chamber during the exhaustingof the sublimated organic material, and wherein the exhaust treatmentchamber is connected with the film formation chamber.
 17. A method ofmanufacturing a device, comprising the steps of: disposing a substratein a film formation chamber, wherein an adhesion preventing shield isprovided in the film formation chamber to surround the substrate;arranging a plurality of vapor-deposition sources along one direction inthe film formation chamber, and wherein each of the plurality ofvapor-deposition sources has a plurality of first nozzles and aplurality of second nozzles surrounded by the plurality of firstnozzles; forming an EL layer comprising an organic material including ahost material and a guest material over the substrate byvapor-depositing the host material and the guest material by using theplurality of first nozzles and the plurality of second nozzles,respectively, wherein a relative position of the substrate with respectto the plurality of vapor-deposition sources is changed in a directionorthogonal to the one direction during the formation of the EL layer;removing the substrate from the film formation chamber after the ELlayer is formed; cleaning the adhesion preventing shield by removing theorganic material deposited on the adhesion preventing shield in the filmformation chamber after the substrate is removed; and exhausting theorganic material from the film formation chamber during cleaning,wherein an edge of the substrate is parallel with the one direction. 18.The method for manufacturing a device according to claim 17, wherein theorganic material is removed by sublimating the organic materialdeposited on the adhesion preventing shield.
 19. The method formanufacturing a device according to claim 17, wherein the organicmaterial is removed by sublimating the organic material deposited on theadhesion preventing shield by heating.
 20. The method according to claim17, wherein the plurality of vapor-deposition sources move in thedirection orthogonal to the one direction during the formation of the ELlayer.
 21. The method according to claim 17, wherein a plasma is formedin an exhaust treatment chamber during the exhausting of the sublimatedorganic material, and wherein the exhaust treatment chamber is connectedwith the film formation chamber.